• Beam energy and current range: 50 KV, 50pA-40 nA

• Beam size: less than 2.5 nm

• Scan frequency: 50 MHz

• Write-field size (Max): 500 x 500 microns

• Field stich and overlay accuracy: less than 35 nm

• Minimum guaranteed linewidth: 10 nm

• Wafer/sample size: 0.3 x 0.3 in sample size to 6 in wafer

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