Oxford Instruments, RIE NGP80

• Wide range of materials can be etched (Si, SiO2, Si3N4, glass, III-V, polymers)

• 240mm Electrode Size – can accommodate samples from 1 – 6 in

• Wafer stage temperature range: 10-80°C

• Single RF plasma source determines both ion density and energy

• 5-500 mTorr operating pressure

This instrument is housed in IATL 174 and is managed by Schaffer Finney.

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