Oxford Instruments, RIE NGP80
• Wide range of materials can be etched (Si, SiO2, Si3N4, glass, III-V, polymers)
• 240mm Electrode Size – can accommodate samples from 1 – 6 in
• Wafer stage temperature range: 10-80°C
• Single RF plasma source determines both ion density and energy
• 5-500 mTorr operating pressure
This instrument is housed in IATL 174 and is managed by Schaffer Finney.