Oxford Instruments – RIE-ICP PlasmaPro 100 Cobra

• Single wafer cassette loading

• Substrate temperature control is provided by a range of electrodes, with a temperature range of -150°C to +700°C

• 12-line gas pod provides flexibility in processes and process gases

• Cryo Si etch, Bosch deep Si etch and SOI processes for MEMS, microfluidics and photonics

• Up to 200mm single wafer processing

• Available etch and process gases: BCl3, Cl2, H2, Ar, N2

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