Oxford Instruments – RIE-ICP PlasmaPro 100 Cobra
• Single wafer cassette loading
• Substrate temperature control is provided by a range of electrodes, with a temperature range of -150°C to +700°C
• 12-line gas pod provides flexibility in processes and process gases
• Cryo Si etch, Bosch deep Si etch and SOI processes for MEMS, microfluidics and photonics
• Up to 200mm single wafer processing
• Available etch and process gases: BCl3, Cl2, H2, Ar, N2
This instrument is located in IATL 174 and is managed by Schaffer Finney