Oxford Instruments - Atomic Layer Deposition (ALD) System
OpAL: THICKNESS CONTROL AT THE ATOMIC SCALE
• Wafer: Up to 200 mm wafers & pieces directly on stage
• Bubbled Liquid and Solid Precursors: Up to 3
• Max Precursor Source Temperature: 200°C (Jacket)
• Thermal Gas Precursors = 2 internally
• Plasma Gases = Up to 8 in externally mounted gas pod
• Wafer Stage Temperature Range: 25°C - 400°C
• Current materials available: Al2O3, SiO2
This instrument is located in IATL 174 and is managed by Schaffer Finney.