Oxford Instruments - Atomic Layer Deposition (ALD) System 

OpAL: THICKNESS CONTROL AT THE ATOMIC SCALE

• Wafer: Up to 200 mm wafers & pieces directly on stage

• Bubbled Liquid and Solid Precursors: Up to 3

• Max Precursor Source Temperature: 200°C (Jacket)

• Thermal Gas Precursors = 2 internally

• Plasma Gases = Up to 8 in externally mounted gas pod

• Wafer Stage Temperature Range: 25°C - 400°C

• Current materials available: Al2O3, SiO2

 

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